Vishay Siliconix SI4953ADY-T1-E3

SI4953ADY-T1-E3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1V @ 250µA (Min)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
53mOhm @ 4.9A, 10V
edacadModel:
SI4953ADY-T1-E3 Models
Gate Charge (Qg) (Max) @ Vgs:
25nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
3.7A
edacadModelUrl:
/en/models/1657007
Configuration:
2 P-Channel (Dual)
Package:
Cut Tape (CT)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
-
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Power - Max:
1.1W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4953
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI4953ADY-T1-E3. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa (min). Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 53mohm @ 4.9a, 10v. The maximum gate charge and given voltages include 25nc @ 10v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 3.7a. The product is available in 2 p-channel (dual) configuration. It is shipped in cut tape (ct) package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. 8-soic is the supplier device package value. The maximum power of the product is 1.1w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to si4953, a base product number of the product. The product is designated with the ear99 code number.

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SIL-1072014 Rev0 17/Dec/2014(PCN Obsolescence/ EOL)

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