Vishay Siliconix SI4511DY-T1-E3

SI4511DY-T1-E3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.8V @ 250µA
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
14.5mOhm @ 9.6A, 10V
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
7.2A, 4.6A
Configuration:
N and P-Channel
Package:
Cut Tape (CT)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
-
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Power - Max:
1.1W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4511
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI4511DY-T1-E3. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.8v @ 250µa. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 14.5mohm @ 9.6a, 10v. The maximum gate charge and given voltages include 18nc @ 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 7.2a, 4.6a. The product is available in n and p-channel configuration. It is shipped in cut tape (ct) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. 8-soic is the supplier device package value. The maximum power of the product is 1.1w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to si4511, a base product number of the product. The product is designated with the ear99 code number.

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SIL-1072014 Rev0 17/Dec/2014(PCN Obsolescence/ EOL)
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SI4511DY(Datasheets)

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FAQs

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