Category:
Power MOSFET
Dimensions:
5 x 4 x 1.25mm
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12.5 nC @ 5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
1350 pF @ 25 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
125 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
STripFET
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
1.25mm
Typical Turn-On Delay Time:
25 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
80 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
80mOhm @ 2A, 10V
edacadModel:
STS4DPF30L Models
Gate Charge (Qg) (Max) @ Vgs:
16nC @ 5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
4A
edacadModelUrl:
/en/models/654587
Configuration:
2 P-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1350pF @ 25V
Mounting Type:
Surface Mount
Series:
STripFET™
Supplier Device Package:
8-SOIC
Power - Max:
2W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STS4D
ECCN:
EAR99
