Maximum Continuous Drain Current:
26 A
Width:
5.1mm
Automotive Standard:
AEC-Q101
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
DFN
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
5 nC @ 10 V
Channel Type:
N
Length:
6.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
19 W
Series:
NVMFD5C680NL
Maximum Gate Source Voltage:
±20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
41 mΩ
FET Feature:
Standard
Base Part Number:
NVMFD5
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 7.5A (Ta), 26A (Tc) 3W (Ta), 19W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Input Capacitance (Ciss) (Max) @ Vds:
350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
2nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.2V @ 13µA
Series:
Automotive, AEC-Q101
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
28mOhm @ 5A, 10V
Supplier Device Package:
8-DFN (5x6) Dual Flag (SO8FL-Dual)
Manufacturer Standard Lead Time:
17 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
3W (Ta), 19W (Tc)
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
7.5A (Ta), 26A (Tc)
Manufacturer:
ON Semiconductor
