Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
38 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
89 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
3.5V
Height:
1.05mm
Width:
6.1mm
Length:
5.1mm
Maximum Drain Source Resistance:
2.9 mΩ
Package Type:
DFN
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
127 A
Minimum Gate Threshold Voltage:
2.5V
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
8
FET Feature:
Standard
Base Part Number:
NVMFD5
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 40V 24A (Ta), 127A (Tc) 3.2W (Ta), 89W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Input Capacitance (Ciss) (Max) @ Vds:
2450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
38nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Drain to Source Voltage (Vdss):
40V
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
2.9mOhm @ 30A, 10V
Supplier Device Package:
8-DFN (5x6) Dual Flag (SO8FL-Dual)
Manufacturer Standard Lead Time:
30 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
3.2W (Ta), 89W (Tc)
Current - Continuous Drain (Id) @ 25°C:
24A (Ta), 127A (Tc)
Manufacturer:
ON Semiconductor
