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ON Semiconductor NTMD6N04R2G

NTMD6N04R2G ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
NTMD6N
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 40V 4.6A 1.29W Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
900pF @ 32V
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Drain to Source Voltage (Vdss):
40V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
34mOhm @ 5.8A, 10V
Supplier Device Package:
8-SOIC
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
1.29W
Current - Continuous Drain (Id) @ 25°C:
4.6A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTMD6N04R2G. The FET features of the product include logic level gate. Base Part Number: ntmd6n. It features mosfet array 2 n-channel (dual) 40v 4.6a 1.29w surface mount 8-soic. The product's input capacitance at maximum includes 900pf @ 32v. The maximum gate charge and given voltages include 30nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has a 40v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 34mohm @ 5.8a, 10v. 8-soic is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 1.29w. The continuous current drain at 25°C is 4.6a. The on semiconductor's product offers user-desired applications.

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Multiple Devices Update 28/Jun/2011(PCN Obsolescence/ EOL)
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Multiple Devices 27/Jun/2014(PCN Obsolescence/ EOL)
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NTMD6N04R2(Datasheets)
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Multiple Devices Copper Wire 20/Aug/2008(PCN Design/Specification)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor NTMD6N04R2G and the best services all around the world ET14541964. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor NTMD6N04R2G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor NTMD6N04R2G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NTMD6N04R2G. We stock a large inventory containing a wide range of variety ET14541964, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor NTMD6N04R2G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET14541964 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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