ON Semiconductor NDS8858H

NDS8858H ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
NDS885
Detailed Description:
Mosfet Array N and P-Channel 30V 6.3A, 4.8A 1W Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
720pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.8V @ 250µA
Drain to Source Voltage (Vdss):
30V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
35mOhm @ 4.8A, 10V
Supplier Device Package:
8-SOIC
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
1W
Current - Continuous Drain (Id) @ 25°C:
6.3A, 4.8A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NDS8858H. The FET features of the product include logic level gate. Base Part Number: nds885. It features mosfet array n and p-channel 30v 6.3a, 4.8a 1w surface mount 8-soic. The product's input capacitance at maximum includes 720pf @ 15v. The maximum gate charge and given voltages include 30nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.8v @ 250µa. The product has a 30v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 35mohm @ 4.8a, 10v. 8-soic is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 1w. The continuous current drain at 25°C is 6.3a, 4.8a. The on semiconductor's product offers user-desired applications.

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NDS8858H(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor NDS8858H and the best services all around the world ET14540343. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor NDS8858H, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor NDS8858H is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NDS8858H. We stock a large inventory containing a wide range of variety ET14540343, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor NDS8858H. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET14540343 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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