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ON Semiconductor FQS4900TF

FQS4900TF ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Standard
Base Part Number:
FQS4900
Detailed Description:
Mosfet Array N and P-Channel 60V, 300V 1.3A, 300mA 2W Surface Mount 8-SO
Gate Charge (Qg) (Max) @ Vgs:
2.1nC @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.95V @ 20mA
Series:
QFET®
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
550mOhm @ 650mA, 10V
Supplier Device Package:
8-SO
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
2W
Drain to Source Voltage (Vdss):
60V, 300V
Current - Continuous Drain (Id) @ 25°C:
1.3A, 300mA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FQS4900TF. The FET features of the product include standard. Base Part Number: fqs4900. It features mosfet array n and p-channel 60v, 300v 1.3a, 300ma 2w surface mount 8-so. The maximum gate charge and given voltages include 2.1nc @ 5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.95v @ 20ma. The product qfet®, is a highly preferred choice for users. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 550mohm @ 650ma, 10v. 8-so is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 2w. The product has a 60v, 300v drain to source voltage. The continuous current drain at 25°C is 1.3a, 300ma. The on semiconductor's product offers user-desired applications.

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Alt. Assembly Location 03/Mar/2016(PCN Assembly/Origin)
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Device Marking Update 02/Jul/2015(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor FQS4900TF and the best services all around the world ET14523193. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor FQS4900TF, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor FQS4900TF is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FQS4900TF. We stock a large inventory containing a wide range of variety ET14523193, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor FQS4900TF. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET14523193 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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