Dimensions:
2.3 x 1.3 x 0.15mm
Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Common Drain
Maximum Drain Source Voltage:
20 V
Maximum Drain Source Resistance:
20 mΩ
Package Type:
WLCSP
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1545 pF @ 10 V
Length:
2.3mm
Pin Count:
6
Typical Turn-Off Delay Time:
34 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.15mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
Logic Level Gate
Base Part Number:
FDZ1323
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 10A 500mW Surface Mount 6-WLCSP (1.3x2.3)
Input Capacitance (Ciss) (Max) @ Vds:
2055pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
24nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Series:
PowerTrench®
Package / Case:
6-XFBGA, WLCSP
Rds On (Max) @ Id, Vgs:
13mOhm @ 1A, 4.5V
Supplier Device Package:
6-WLCSP (1.3x2.3)
Manufacturer Standard Lead Time:
40 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual) Common Drain
Customer Reference:
Power - Max:
500mW
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
10A
Manufacturer:
ON Semiconductor
