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ON Semiconductor FDY2001PZ

FDY2001PZ ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
FDY20
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 20V 150mA 446mW Surface Mount SOT-563F
Input Capacitance (Ciss) (Max) @ Vds:
100pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
1.4nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Series:
PowerTrench®
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
8Ohm @ 150mA, 4.5V
Supplier Device Package:
SOT-563F
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
446mW
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
150mA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FDY2001PZ. The FET features of the product include logic level gate. Base Part Number: fdy20. It features mosfet array 2 p-channel (dual) 20v 150ma 446mw surface mount sot-563f. The product's input capacitance at maximum includes 100pf @ 10v. The maximum gate charge and given voltages include 1.4nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in sot-563, sot-666. It has a maximum Rds On and voltage of 8ohm @ 150ma, 4.5v. sot-563f is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 446mw. The product has a 20v drain to source voltage. The continuous current drain at 25°C is 150ma. The on semiconductor's product offers user-desired applications.

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FDY2001PZ(Datasheets)
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Mold Compound 20/Aug/2008(PCN Design/Specification)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor FDY2001PZ and the best services all around the world ET14520076. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor FDY2001PZ, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor FDY2001PZ is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDY2001PZ. We stock a large inventory containing a wide range of variety ET14520076, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor FDY2001PZ. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET14520076 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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Yes. We ship FDY2001PZ Internationally to many countries around the world.