Category:
Power MOSFET
Dimensions:
5.1 x 6.1 x 0.75mm
Maximum Continuous Drain Current:
60 A, 110 A
Transistor Material:
Si
Width:
6.1mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
25 V
Package Type:
Power Clip 56
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
25 nC @ 10 V, 93 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1695 pF@ 13 V, 6580 pF@ 13 V
Length:
5.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
24 ns, 47 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
21 W, 42 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.75mm
Typical Turn-On Delay Time:
8 ns, 16 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.5 mΩ, 5.3 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDPC8014
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 20A, 41A 2.1W, 2.3W Surface Mount Power Clip 56
Input Capacitance (Ciss) (Max) @ Vds:
2375pF @ 13V
Gate Charge (Qg) (Max) @ Vgs:
35nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Series:
PowerTrench®
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
3.8mOhm @ 20A, 10V
Supplier Device Package:
Power Clip 56
Manufacturer Standard Lead Time:
34 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual) Asymmetrical
Customer Reference:
Power - Max:
2.1W, 2.3W
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
20A, 41A
Manufacturer:
ON Semiconductor
