Dimensions:
3.4 x 3.4 x 0.75mm
Maximum Continuous Drain Current:
27 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Common Drain
Maximum Drain Source Voltage:
30 V
Maximum Drain Source Resistance:
4.6 mΩ, 6.4 mΩ
Package Type:
Power Clip 33
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
35 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2295 pF@ 15 V
Length:
3.4mm
Pin Count:
8
Typical Turn-Off Delay Time:
32 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.7 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.75mm
Typical Turn-On Delay Time:
8.5 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
Logic Level Gate
Base Part Number:
FDPC4
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Common Drain 1W Surface Mount Powerclip-33
Input Capacitance (Ciss) (Max) @ Vds:
3215pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
49nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
PowerTrench®
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
4.3mOhm @ 27A, 10V
Supplier Device Package:
Powerclip-33
Manufacturer Standard Lead Time:
50 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual) Common Drain
Customer Reference:
Power - Max:
1W
Manufacturer:
ON Semiconductor
