ON Semiconductor FDMS3622S

FDMS3622S ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
FDMS36
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 17.5A, 34A 1W Surface Mount Power56
Input Capacitance (Ciss) (Max) @ Vds:
1570pF @ 13V
Gate Charge (Qg) (Max) @ Vgs:
26nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 250µA
Series:
PowerTrench®
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
5mOhm @ 17.5A, 10V
Supplier Device Package:
Power56
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual) Asymmetrical
Customer Reference:
Power - Max:
1W
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
17.5A, 34A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FDMS3622S. The FET features of the product include logic level gate. Base Part Number: fdms36. It features mosfet array 2 n-channel (dual) asymmetrical 25v 17.5a, 34a 1w surface mount power56. The product's input capacitance at maximum includes 1570pf @ 13v. The maximum gate charge and given voltages include 26nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 5mohm @ 17.5a, 10v. power56 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual) asymmetrical. The maximum power of the product is 1w. The product has a 25v drain to source voltage. The continuous current drain at 25°C is 17.5a, 34a. The on semiconductor's product offers user-desired applications.

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Mult Dev Assembly 11/Mar/2020(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 13/May/2020(PCN Obsolescence/ EOL)
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FDMS3622S Datasheet(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor FDMS3622S and the best services all around the world ET14519316. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor FDMS3622S, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor FDMS3622S is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDMS3622S. We stock a large inventory containing a wide range of variety ET14519316, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor FDMS3622S. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET14519316 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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