Maximum Continuous Drain Current:
3.8 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Package Type:
MicroFET Thin
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3 nC @ 4.5 V
Channel Type:
N
Length:
1.6mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.4 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
160 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDME10
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 20V 3.8A 600mW Surface Mount 6-MicroFET (1.6x1.6)
Input Capacitance (Ciss) (Max) @ Vds:
300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
4.2nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA
Series:
PowerTrench®
Package / Case:
6-UFDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
66mOhm @ 3.4A, 4.5V
Supplier Device Package:
6-MicroFET (1.6x1.6)
Manufacturer Standard Lead Time:
30 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
600mW
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
3.8A
Manufacturer:
ON Semiconductor
