Category:
Power MOSFET
Dimensions:
5.1 x 3.4 x 0.75mm
Maximum Continuous Drain Current:
21 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Common Source
Maximum Drain Source Voltage:
100 V
Package Type:
PQFN
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
734 pF @ 50 V
Length:
5.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
14 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
23 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.75mm
Typical Turn-On Delay Time:
8.4 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
38 mΩ
FET Feature:
Standard
Base Part Number:
FDMD84
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Common Source 100V 7A 2.1W Surface Mount Power 3.3x5
Input Capacitance (Ciss) (Max) @ Vds:
980pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:
16nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 250µA
Series:
PowerTrench®
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
20mOhm @ 7A, 10V
Supplier Device Package:
Power 3.3x5
Manufacturer Standard Lead Time:
44 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual) Common Source
Customer Reference:
Power - Max:
2.1W
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
7A
Manufacturer:
ON Semiconductor
