Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Width:
2mm
Transistor Configuration:
Common Drain
Maximum Drain Source Voltage:
20 V
Package Type:
MLP
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
22 nC @ 4.5 V
Channel Type:
P
Length:
3mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.2 W, 800 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.725mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
50 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDMB23
Detailed Description:
Mosfet Array 2 P-Channel (Dual) Common Drain 800mW Surface Mount 6-MLP (2x3)
Input Capacitance (Ciss) (Max) @ Vds:
3030pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Series:
PowerTrench®
Package / Case:
6-WDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
36mOhm @ 5.7A, 4.5V
Supplier Device Package:
6-MLP (2x3)
Manufacturer Standard Lead Time:
20 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual) Common Drain
Customer Reference:
Power - Max:
800mW
Manufacturer:
ON Semiconductor
