Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
18 nC @ 4.5 V, 20 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.2 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.75mm
Width:
3mm
Length:
2mm
Minimum Gate Threshold Voltage:
0.6V
Package Type:
MLP
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Common Drain
FET Feature:
Logic Level Gate
Base Part Number:
FDMB23
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Common Drain 800mW Surface Mount 6-MLP (2x3)
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
28nC @ 5V
Series:
PowerTrench®
Package / Case:
6-WDFN Exposed Pad
Supplier Device Package:
6-MLP (2x3)
Manufacturer Standard Lead Time:
16 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual) Common Drain
Customer Reference:
Power - Max:
800mW
Manufacturer:
ON Semiconductor
