Maximum Continuous Drain Current:
1.2 A
Transistor Material:
Si
Width:
1.25mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Package Type:
SOT-363 (SC-70)
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.8 nC @ 4.5 V
Channel Type:
N
Length:
2mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 mW, 360 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
259 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDG102
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 20V 1.2A 300mW Surface Mount SC-88 (SC-70-6)
Input Capacitance (Ciss) (Max) @ Vds:
150pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
2.6nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA
Series:
PowerTrench®
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
175mOhm @ 1.2A, 4.5V
Supplier Device Package:
SC-88 (SC-70-6)
Manufacturer Standard Lead Time:
14 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
300mW
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
1.2A
Manufacturer:
ON Semiconductor
