Maximum Continuous Drain Current:
6.5 A, 9 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Common Drain
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
3V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14 nC @ 10 V, 17 nC @ 10 V
Channel Type:
N, P
Length:
6.73mm
Pin Count:
5
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
3.1 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
24 mΩ, 54 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDD842
Detailed Description:
Mosfet Array N and P-Channel 40V 9A, 6.5A 1.3W Surface Mount TO-252-4L
Input Capacitance (Ciss) (Max) @ Vds:
1000pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
PowerTrench®
Package / Case:
TO-252-5, DPak (4 Leads + Tab), TO-252AD
Rds On (Max) @ Id, Vgs:
24mOhm @ 9A, 10V
Supplier Device Package:
TO-252-4L
Manufacturer Standard Lead Time:
36 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
1.3W
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
9A, 6.5A
Manufacturer:
ON Semiconductor
