Maximum Continuous Drain Current:
2 A, 2.5 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Package Type:
SOT-23
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.1 nC @ 10 V, 4.7 nC @ 10 V
Channel Type:
N, P
Length:
3mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
960 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-25 V, -16 V, +16 V, +25 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
150 mΩ, 220 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDC6333
Detailed Description:
Mosfet Array N and P-Channel 30V 2.5A, 2A 700mW Surface Mount SuperSOT™-6
Input Capacitance (Ciss) (Max) @ Vds:
282pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
6.6nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
PowerTrench®
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
95mOhm @ 2.5A, 10V
Supplier Device Package:
SuperSOT™-6
Manufacturer Standard Lead Time:
10 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
700mW
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
2.5A, 2A
Manufacturer:
ON Semiconductor
