ON Semiconductor FDC6302P

FDC6302P ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
FDC6302
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 25V 120mA 700mW Surface Mount SuperSOT™-6
Input Capacitance (Ciss) (Max) @ Vds:
11pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
0.31nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Drain to Source Voltage (Vdss):
25V
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
10Ohm @ 200mA, 4.5V
Supplier Device Package:
SuperSOT™-6
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
700mW
Current - Continuous Drain (Id) @ 25°C:
120mA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FDC6302P. The FET features of the product include logic level gate. Base Part Number: fdc6302. It features mosfet array 2 p-channel (dual) 25v 120ma 700mw surface mount supersot™-6. The product's input capacitance at maximum includes 11pf @ 10v. The maximum gate charge and given voltages include 0.31nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has a 25v drain to source voltage. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 10ohm @ 200ma, 4.5v. supersot™-6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 700mw. The continuous current drain at 25°C is 120ma. The on semiconductor's product offers user-desired applications.

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Mult Dev Assembly Chg 6/May/2020(PCN Assembly/Origin)
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FDC6x, NDC7003P Die 11/May/2007(PCN Design/Specification)
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Mold Compound 08/April/2008(PCN Design/Specification)
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Mult Dev EOL 17/Aug/2020(PCN Obsolescence/ EOL)
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FDC6302P(Datasheets)
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Binary Year Code Marking 15/Jan/2014(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor FDC6302P and the best services all around the world ET14518610. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor FDC6302P, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

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