Category:
Power MOSFET
Dimensions:
3.4 x 1.77 x 0.22mm
Maximum Continuous Drain Current:
27 A
Transistor Material:
Si
Width:
1.77mm
Transistor Configuration:
Common Drain
Maximum Drain Source Voltage:
12 V
Maximum Gate Threshold Voltage:
1.3V
Package Type:
CSP
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
100 nC @ 4.5 V
Channel Type:
N
Length:
3.4mm
Pin Count:
6
Forward Transconductance:
19S
Typical Turn-Off Delay Time:
38000 ns
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.22mm
Typical Turn-On Delay Time:
80 ns
Maximum Drain Source Resistance:
6.3 mΩ
FET Feature:
Logic Level Gate, 2.5V Drive
Base Part Number:
EFC8811
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Common Drain 2.5W Surface Mount 6-CSP (1.77x3.54)
Mounting Type:
Surface Mount
Package / Case:
6-SMD, No Lead
Supplier Device Package:
6-CSP (1.77x3.54)
Manufacturer Standard Lead Time:
25 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual) Common Drain
Customer Reference:
Power - Max:
2.5W
Manufacturer:
ON Semiconductor
