FET Feature:
Logic Level Gate, 5V Drive
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.9V @ 250µA, 1.6V @ 250µA
Operating Temperature:
-55°C ~ 125°C
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs:
3.8nC @ 45V, 7.4nC @ 45V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD86336Q3DT Models
Current - Continuous Drain (Id) @ 25°C:
20A (Ta)
edacadModelUrl:
/en/models/8604642
Configuration:
2 N-Channel (Half Bridge)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
494pF @ 12.5V, 970pF @ 12.5V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSON (3.3x3.3)
Power - Max:
6W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD86336Q3
ECCN:
EAR99
