EPC EPC2111ENGRT

EPC2111ENGRT EPC
EPC

Product Information

FET Feature:
GaNFET (Gallium Nitride)
Rds On (Max) @ Id, Vgs:
19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Detailed Description:
Mosfet Array 2 N-Channel (Half Bridge) 30V 16A (Ta) Surface Mount Die
Input Capacitance (Ciss) (Max) @ Vds:
230pF @ 15V, 590pF @ 15V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 5mA
Drain to Source Voltage (Vdss):
30V
Gate Charge (Qg) (Max) @ Vgs:
2.2nC @ 5V, 5.7nC @ 5V
Supplier Device Package:
Die
Manufacturer Standard Lead Time:
16 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Half Bridge)
Package / Case:
Die
Current - Continuous Drain (Id) @ 25°C:
16A (Ta)
Manufacturer:
EPC
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This is 2111ENGRT manufactured by EPC. The manufacturer part number is EPC2111ENGRT. The FET features of the product include ganfet (gallium nitride). It has a maximum Rds On and voltage of 19mohm @ 15a, 5v, 8mohm @ 15a, 5v. It features mosfet array 2 n-channel (half bridge) 30v 16a (ta) surface mount die. The product's input capacitance at maximum includes 230pf @ 15v, 590pf @ 15v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 5ma. The product has a 30v drain to source voltage. The maximum gate charge and given voltages include 2.2nc @ 5v, 5.7nc @ 5v. die is the supplier device package value. It has typical 16 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (half bridge). Moreover, the product comes in die. The continuous current drain at 25°C is 16a (ta). The epc's product offers user-desired applications.

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EPC2111(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative EPC EPC2111ENGRT and the best services all around the world ET14165500. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, EPC EPC2111ENGRT, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as EPC, commonly silicon.

Our EPC EPC2111ENGRT is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at EPC2111ENGRT. We stock a large inventory containing a wide range of variety ET14165500, differentiates by its unique features EPC. We also have discounts for potential customers and let it until most of them avail from EPC EPC2111ENGRT. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET14165500 from leading EPC, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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You will get a confirmation email regarding your order of EPC EPC2111ENGRT. You can also check on our website or by contacting our customer support team for further order details on EPC EPC2111ENGRT.
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