Category:
Power MOSFET
Dimensions:
1.6 x 1.6 x 0.5mm
Maximum Continuous Drain Current:
2.6 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Package Type:
MicroFET Thin
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.5 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
305 pF @ -10 V
Length:
1.6mm
Pin Count:
6
Typical Turn-Off Delay Time:
33 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.4 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±8 V
Height:
0.5mm
Typical Turn-On Delay Time:
4.7 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
530 mΩ
FET Feature:
Logic Level Gate
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UFDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
7.7nC @ 4.5V
Rds On (Max) @ Id, Vgs:
142mOhm @ 2.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C:
2.6A
Configuration:
2 P-Channel (Dual)
Package:
Bulk
Drain to Source Voltage (Vdss):
20V
Input Capacitance (Ciss) (Max) @ Vds:
405pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
6-UMLP (1.6x1.6)
Power - Max:
600mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDME1023
