Dimensions:
1.7 x 1.2 x 0.6mm
Maximum Continuous Drain Current:
830 mA
Transistor Material:
Si
Width:
1.2mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Package Type:
SC-89
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2.2 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
100 pF @ -10 V
Length:
1.7mm
Pin Count:
6
Typical Turn-Off Delay Time:
23 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.625 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±8 V
Height:
0.6mm
Typical Turn-On Delay Time:
3.5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.8 Ω
FET Feature:
Logic Level Gate
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-563, SOT-666
Gate Charge (Qg) (Max) @ Vgs:
3.1nC @ 4.5V
Rds On (Max) @ Id, Vgs:
500mOhm @ 830mA, 4.5V
Current - Continuous Drain (Id) @ 25°C:
830mA
Configuration:
2 P-Channel (Dual)
Package:
Bulk
Drain to Source Voltage (Vdss):
20V
Input Capacitance (Ciss) (Max) @ Vds:
135pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SOT-563F
Power - Max:
446mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDY1002
ECCN:
EAR99
