Category:
Power MOSFET
Dimensions:
5.1 x 3.4 x 0.75mm
Maximum Continuous Drain Current:
25 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
100 V
Package Type:
PQFN
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
805 pF @ 50 V
Length:
5.1mm
Pin Count:
12
Typical Turn-Off Delay Time:
15 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.1 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±20 V
Height:
0.75mm
Typical Turn-On Delay Time:
9.4 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
35 mΩ
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
12-PowerWDFN
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 10V
Rds On (Max) @ Id, Vgs:
19mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C:
7A
Configuration:
2 N-Channel (Dual)
Package:
Bulk
Drain to Source Voltage (Vdss):
100V
Input Capacitance (Ciss) (Max) @ Vds:
1070pF @ 50V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
12-Power3.3x5
Power - Max:
1W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMD82
ECCN:
EAR99
