Category:
Power MOSFET
Dimensions:
5.1 x 6.1 x 1.05mm
Maximum Continuous Drain Current:
88 A, 89 A
Transistor Material:
Si
Width:
6.1mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
25 V
Package Type:
PQFN
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
19 nC @ 10 V, 31 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1326 pF@ 13 V, 2175 pF@ 13 V
Length:
5.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
19 ns, 24 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.3 W
Series:
PowerTrench, SyncFET
Maximum Gate Source Voltage:
±20 V
Height:
1.05mm
Typical Turn-On Delay Time:
7.7 (Q1) ns, 9.5 (Q2) ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
4.6 mΩ, 7.9 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
27nC @ 10V
Rds On (Max) @ Id, Vgs:
5.8mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C:
16A, 18A
Configuration:
2 N-Channel (Dual) Asymmetrical
Package:
Bulk
Drain to Source Voltage (Vdss):
25V
Input Capacitance (Ciss) (Max) @ Vds:
1765pF @ 13V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Power - Max:
1W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS3615
ECCN:
EAR99
