ON Semiconductor NVMFD5483NLT1G

NVMFD5483NLT1G ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
NVMFD5483
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 6.4A 3.1W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Input Capacitance (Ciss) (Max) @ Vds:
668pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
23.4nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Drain to Source Voltage (Vdss):
60V
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
36mOhm @ 15A, 10V
Supplier Device Package:
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
3.1W
Current - Continuous Drain (Id) @ 25°C:
6.4A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NVMFD5483NLT1G. The FET features of the product include logic level gate. Base Part Number: nvmfd5483. It features mosfet array 2 n-channel (dual) 60v 6.4a 3.1w surface mount 8-dfn (5x6) dual flag (so8fl-dual-asymmetrical). The product's input capacitance at maximum includes 668pf @ 25v. The maximum gate charge and given voltages include 23.4nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has a 60v drain to source voltage. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 36mohm @ 15a, 10v. 8-dfn (5x6) dual flag (so8fl-dual-asymmetrical) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 3.1w. The continuous current drain at 25°C is 6.4a. The on semiconductor's product offers user-desired applications.

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NVMFD5483NL(WF)(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor NVMFD5483NLT1G and the best services all around the world ET12863577. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor NVMFD5483NLT1G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

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