Diodes Incorporated DMHC10H170SFJ-13

DMHC10H170SFJ-13 Diodes Incorporated
Diodes Incorporated

Product Information

FET Feature:
Standard
Rds On (Max) @ Id, Vgs:
160mOhm @ 5A, 10V
Detailed Description:
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V 2.9A, 2.3A 2.1W Surface Mount V-DFN5045-12
Input Capacitance (Ciss) (Max) @ Vds:
1167pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
9.7nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Drain to Source Voltage (Vdss):
100V
Package / Case:
12-VDFN Exposed Pad
Supplier Device Package:
V-DFN5045-12
Manufacturer Standard Lead Time:
18 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N and 2 P-Channel (H-Bridge)
Customer Reference:
Power - Max:
2.1W
Current - Continuous Drain (Id) @ 25°C:
2.9A, 2.3A
Manufacturer:
Diodes Incorporated
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This is manufactured by Diodes Incorporated. The manufacturer part number is DMHC10H170SFJ-13. The FET features of the product include standard. It has a maximum Rds On and voltage of 160mohm @ 5a, 10v. It features mosfet array 2 n and 2 p-channel (h-bridge) 100v 2.9a, 2.3a 2.1w surface mount v-dfn5045-12. The product's input capacitance at maximum includes 1167pf @ 25v. The maximum gate charge and given voltages include 9.7nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has a 100v drain to source voltage. Moreover, the product comes in 12-vdfn exposed pad. v-dfn5045-12 is the supplier device package value. It has typical 18 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n and 2 p-channel (h-bridge). The maximum power of the product is 2.1w. The continuous current drain at 25°C is 2.9a, 2.3a. The diodes incorporated's product offers user-desired applications.

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DMHC10H170SFJ(Datasheets)
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Diodes RoHS 3 Cert(Environmental Information)

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