Diodes Incorporated DMN601VKQ-7

DMN601VKQ-7 Diodes Incorporated
Diodes Incorporated

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
2Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
-
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
305mA
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 25V
standardLeadTime:
8 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-563
Power - Max:
250mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMN601
ECCN:
EAR99
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This is manufactured by Diodes Incorporated. The manufacturer part number is DMN601VKQ-7. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-563, sot-666. It has a maximum Rds On and voltage of 2ohm @ 500ma, 10v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 305ma. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 60v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 50pf @ 25v. It has a long 8 weeks standard lead time. The product is available in surface mount configuration. sot-563 is the supplier device package value. The maximum power of the product is 250mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to dmn601, a base product number of the product. The product is designated with the ear99 code number.

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Diodes Environmental Compliance Cert(Environmental Information)
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DMG/DMN/DMT 02/Mar/2022(PCN Assembly/Origin)
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DM CAT 20-Mar-2022(PCN Design/Specification)
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DMN601VKQ(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Diodes Incorporated DMN601VKQ-7 and the best services all around the world ET12218359. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Diodes Incorporated DMN601VKQ-7, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Diodes Incorporated, commonly silicon.

Our Diodes Incorporated DMN601VKQ-7 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at DMN601VKQ-7. We stock a large inventory containing a wide range of variety ET12218359, differentiates by its unique features Diodes Incorporated. We also have discounts for potential customers and let it until most of them avail from Diodes Incorporated DMN601VKQ-7. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET12218359 from leading Diodes Incorporated, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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