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This is manufactured by Vishay Siliconix. The manufacturer part number is SI3900DV-T1-GE3. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 125mohm @ 2.4a, 4.5v. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 2a. The product is available in 2 n-channel (dual) configuration. The vishay siliconix's product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. The maximum gate charge and given voltages include 4nc @ 4.5v. 6-tsop is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 830mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to si3900, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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