Maximum Continuous Drain Current:
120 A
Transistor Material:
Si
Width:
5.1mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.1V
Package Type:
SON
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
20 nC @ 4.5 V, 8.4 nC @ 4.5 V
Channel Type:
N
Length:
6.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
12 W
Series:
NexFET
Maximum Gate Source Voltage:
+8 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.2 mΩ, 5 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerLDFN
Rds On (Max) @ Id, Vgs:
5.9mOhm @ 20A, 8V
Gate Charge (Qg) (Max) @ Vgs:
10.9nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD87350Q5D Models
Current - Continuous Drain (Id) @ 25°C:
40A
edacadModelUrl:
/en/models/2615900
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1770pF @ 15V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-LSON (5x6)
Power - Max:
12W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD87350Q5
ECCN:
EAR99
