Rohm Semiconductor QS6J1TR

QS6J1TR Rohm Semiconductor
QS6J1TR
Rohm Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
*J1
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 20V 1.5A 1.25W Surface Mount TSMT6 (SC-95)
Input Capacitance (Ciss) (Max) @ Vds:
270pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
3nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 1mA
Drain to Source Voltage (Vdss):
20V
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
215mOhm @ 1.5A, 4.5V
Supplier Device Package:
TSMT6 (SC-95)
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 P-Channel (Dual)
Power - Max:
1.25W
Current - Continuous Drain (Id) @ 25°C:
1.5A
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is QS6J1TR. The FET features of the product include logic level gate. Base Part Number: *j1. It features mosfet array 2 p-channel (dual) 20v 1.5a 1.25w surface mount tsmt6 (sc-95). The product's input capacitance at maximum includes 270pf @ 10v. The maximum gate charge and given voltages include 3nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2v @ 1ma. The product has a 20v drain to source voltage. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 215mohm @ 1.5a, 4.5v. tsmt6 (sc-95) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 1.25w. The continuous current drain at 25°C is 1.5a. The rohm semiconductor's product offers user-desired applications.

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TSMT Package Updates 24/Dec/2014(PCN Design/Specification)
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QS6J1(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Rohm Semiconductor QS6J1TR and the best services all around the world ET12063142. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Rohm Semiconductor QS6J1TR, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Rohm Semiconductor, commonly silicon.

Our Rohm Semiconductor QS6J1TR is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at QS6J1TR. We stock a large inventory containing a wide range of variety ET12063142, differentiates by its unique features Rohm Semiconductor. We also have discounts for potential customers and let it until most of them avail from Rohm Semiconductor QS6J1TR. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET12063142 from leading Rohm Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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