ON Semiconductor NVMD6P02R2G

NVMD6P02R2G ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
NVMD6
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 20V 4.8A 750mW Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
1700pF @ 16V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Drain to Source Voltage (Vdss):
20V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
33mOhm @ 6.2A, 4.5V
Supplier Device Package:
8-SOIC
Manufacturer Standard Lead Time:
50 Weeks
Packaging:
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs:
35nC @ 4.5V
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
750mW
Current - Continuous Drain (Id) @ 25°C:
4.8A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NVMD6P02R2G. The FET features of the product include logic level gate. Base Part Number: nvmd6. It features mosfet array 2 p-channel (dual) 20v 4.8a 750mw surface mount 8-soic. The product's input capacitance at maximum includes 1700pf @ 16v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.2v @ 250µa. The product has a 20v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 33mohm @ 6.2a, 4.5v. 8-soic is the supplier device package value. It has typical 50 weeks of manufacturer standard lead time. In addition, tape & reel (tr) is the available packaging type of the product. The maximum gate charge and given voltages include 35nc @ 4.5v. It carries FET type 2 p-channel (dual). The maximum power of the product is 750mw. The continuous current drain at 25°C is 4.8a. The on semiconductor's product offers user-desired applications.

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor NVMD6P02R2G and the best services all around the world ET12057899. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor NVMD6P02R2G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor NVMD6P02R2G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NVMD6P02R2G. We stock a large inventory containing a wide range of variety ET12057899, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor NVMD6P02R2G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET12057899 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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