Nexperia USA Inc. PMGD290XN,115

PMGD290XN-115 Nexperia USA Inc. PMGD290XN,115
Nexperia USA Inc.

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
350mOhm @ 200mA, 4.5V
edacadModel:
PMGD290XN,115 Models
Gate Charge (Qg) (Max) @ Vgs:
0.72nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
860mA
edacadModelUrl:
/en/models/949651
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
34pF @ 20V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
6-TSSOP
Power - Max:
410mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PMGD290
ECCN:
EAR99
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This is manufactured by Nexperia USA Inc.. The manufacturer part number is PMGD290XN,115. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 350mohm @ 200ma, 4.5v. The maximum gate charge and given voltages include 0.72nc @ 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 860ma. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 34pf @ 20v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. 6-tssop is the supplier device package value. The maximum power of the product is 410mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to pmgd290, a base product number of the product. The product is designated with the ear99 code number.

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PMGD290XN(Datasheets)
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Resin Hardener 02/Jul/2013(PCN Design/Specification)
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All Dev Label Chgs 2/Aug/2020(PCN Packaging)
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Logo 10/Dec/2016(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Nexperia USA Inc. PMGD290XN,115 and the best services all around the world ET12037992. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Nexperia USA Inc. PMGD290XN,115, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Nexperia USA Inc., commonly silicon.

Our Nexperia USA Inc. PMGD290XN,115 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at PMGD290XN,115. We stock a large inventory containing a wide range of variety ET12037992, differentiates by its unique features Nexperia USA Inc.. We also have discounts for potential customers and let it until most of them avail from Nexperia USA Inc. PMGD290XN,115. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET12037992 from leading Nexperia USA Inc., feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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