Category:
Power MOSFET
Dimensions:
2 x 1.6 x 0.85mm
Maximum Continuous Drain Current:
2 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.3V
Maximum Drain Source Resistance:
160 mΩ
Package Type:
MCPH
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.8 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
128 pF @ 10 V
Length:
2mm
Pin Count:
6
Typical Turn-Off Delay Time:
14.5 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
800 mW
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
0.85mm
Typical Turn-On Delay Time:
5.1 ns
FET Feature:
Logic Level Gate
Base Part Number:
MCH66
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 20V 2A 800mW Surface Mount 6-MCPH
Input Capacitance (Ciss) (Max) @ Vds:
128pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
1.8nC @ 4.5V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
160mOhm @ 1A, 4.5V
Drain to Source Voltage (Vdss):
20V
Package / Case:
6-SMD, Flat Leads
Supplier Device Package:
6-MCPH
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
800mW
Current - Continuous Drain (Id) @ 25°C:
2A
Manufacturer:
ON Semiconductor
