Nexperia USA Inc. PMDXB600UNEZ

PMDXB600UNEZ Nexperia USA Inc.
Nexperia USA Inc.

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
950mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-XFDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
620mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
0.7nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
600mA
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
21.3pF @ 10V
standardLeadTime:
8 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
DFN1010B-6
Power - Max:
265mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PMDXB600
ECCN:
EAR99
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This is manufactured by Nexperia USA Inc.. The manufacturer part number is PMDXB600UNEZ. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 950mv @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-xfdfn exposed pad. It has a maximum Rds On and voltage of 620mohm @ 600ma, 4.5v. The maximum gate charge and given voltages include 0.7nc @ 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 600ma. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 21.3pf @ 10v. It has a long 8 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. dfn1010b-6 is the supplier device package value. The maximum power of the product is 265mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to pmdxb600, a base product number of the product. The product is designated with the ear99 code number.

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PMDXB600UNE(Datasheets)
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Pin 1 Marking Update 04/Feb/2015(PCN Design/Specification)
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Label Chg 12/Mar/2017(PCN Packaging)
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All Dev Label Chgs 2/Aug/2020(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Nexperia USA Inc. PMDXB600UNEZ and the best services all around the world ET11967827. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Nexperia USA Inc. PMDXB600UNEZ, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Nexperia USA Inc., commonly silicon.

Our Nexperia USA Inc. PMDXB600UNEZ is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at PMDXB600UNEZ. We stock a large inventory containing a wide range of variety ET11967827, differentiates by its unique features Nexperia USA Inc.. We also have discounts for potential customers and let it until most of them avail from Nexperia USA Inc. PMDXB600UNEZ. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11967827 from leading Nexperia USA Inc., feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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