Toshiba Semiconductor and Storage SSM6N15FE(TE85L,F)

SSM6N15FE-TE85L-F- Toshiba Semiconductor and Storage SSM6N15FE(TE85L,F)
SSM6N15FE(TE85L,F)
SSM6N15FE(TE85L,F)
Toshiba Semiconductor and Storage

Product Information

FET Feature:
Logic Level Gate
Rds On (Max) @ Id, Vgs:
4 Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds:
7.8pF @ 3V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 100µA
Standard Package:
1
Package / Case:
SOT-563, SOT-666
Supplier Device Package:
ES6 (1.6x1.6)
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power - Max:
150mW
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
100mA
Manufacturer:
Toshiba Semiconductor and Storage
RoHs Compliant
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N15FE(TE85L,F). The FET features of the product include logic level gate. It has a maximum Rds On and voltage of 4 ohm @ 10ma, 4v. The product's input capacitance at maximum includes 7.8pf @ 3v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.5v @ 100µa. It is available in the standard package of 1. Moreover, the product comes in sot-563, sot-666. es6 (1.6x1.6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). Its typical moisture sensitivity level is 1 (unlimited). The maximum power of the product is 150mw. The product has a 30v drain to source voltage. The continuous current drain at 25°C is 100ma. The toshiba semiconductor and storage's product offers user-desired applications.

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Mosfets Prod Guide(Datasheets)

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