Nexperia USA Inc. BUK9K52-60E,115

BUK9K52-60E-115 Nexperia USA Inc. BUK9K52-60E,115
Nexperia USA Inc.

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
BUK9K52
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 16A 32W Surface Mount LFPAK56D
Input Capacitance (Ciss) (Max) @ Vds:
725pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Series:
Automotive, AEC-Q101, TrenchMOS™
Package / Case:
SOT-1205, 8-LFPAK56
Rds On (Max) @ Id, Vgs:
49mOhm @ 5A, 10V
Supplier Device Package:
LFPAK56D
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
32W
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
16A
Manufacturer:
Nexperia USA Inc.
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This is manufactured by Nexperia USA Inc.. The manufacturer part number is BUK9K52-60E,115. The FET features of the product include logic level gate. Base Part Number: buk9k52. It features mosfet array 2 n-channel (dual) 60v 16a 32w surface mount lfpak56d. The product's input capacitance at maximum includes 725pf @ 25v. The maximum gate charge and given voltages include 10nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.1v @ 1ma. The product automotive, aec-q101, trenchmos™, is a highly preferred choice for users. Moreover, the product comes in sot-1205, 8-lfpak56. It has a maximum Rds On and voltage of 49mohm @ 5a, 10v. lfpak56d is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 32w. The product has a 60v drain to source voltage. The continuous current drain at 25°C is 16a. The nexperia usa inc.'s product offers user-desired applications.

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TrenchMOS Silicon Process Revision 17/Jan/2015(PCN Assembly/Origin)
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BUK9K52-60E Datasheet(Datasheets)
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Mult Devices Label 30/Sep/2018(PCN Packaging)
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All Dev Label Chgs 2/Aug/2020(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Nexperia USA Inc. BUK9K52-60E,115 and the best services all around the world ET11939951. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Nexperia USA Inc. BUK9K52-60E,115, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Nexperia USA Inc., commonly silicon.

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