Microsemi Corporation APTM100H45STG

APTM100H45STG Microsemi Corporation
Microsemi Corporation

Product Information

FET Feature:
Standard
Rds On (Max) @ Id, Vgs:
540mOhm @ 9A, 10V
Detailed Description:
Mosfet Array 4 N-Channel (H-Bridge) 1000V (1kV) 18A 357W Chassis Mount SP4
Input Capacitance (Ciss) (Max) @ Vds:
4350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
154nC @ 10V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
5V @ 2.5mA
Drain to Source Voltage (Vdss):
1000V (1kV)
Package / Case:
SP4
Supplier Device Package:
SP4
Manufacturer Standard Lead Time:
36 Weeks
Packaging:
Bulk
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
4 N-Channel (H-Bridge)
Power - Max:
357W
Current - Continuous Drain (Id) @ 25°C:
18A
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APTM100H45STG. The FET features of the product include standard. It has a maximum Rds On and voltage of 540mohm @ 9a, 10v. It features mosfet array 4 n-channel (h-bridge) 1000v (1kv) 18a 357w chassis mount sp4. The product's input capacitance at maximum includes 4350pf @ 25v. The maximum gate charge and given voltages include 154nc @ 10v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 5v @ 2.5ma. The product has a 1000v (1kv) drain to source voltage. Moreover, the product comes in sp4. sp4 is the supplier device package value. It has typical 36 weeks of manufacturer standard lead time. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 4 n-channel (h-bridge). The maximum power of the product is 357w. The continuous current drain at 25°C is 18a. The microsemi corporation's product offers user-desired applications.

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