Category:
Power MOSFET
Dimensions:
2 x 1.7 x 0.75mm
Maximum Continuous Drain Current:
5 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
12 V
Maximum Gate Threshold Voltage:
1.3V
Package Type:
EMH
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
1300 pF @ -6 V
Length:
2mm
Pin Count:
8
Typical Turn-Off Delay Time:
79 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
0.75mm
Typical Turn-On Delay Time:
16 ns
Maximum Drain Source Resistance:
200 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
EMH2314
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 12V 5A 1.2W Surface Mount 8-EMH
Input Capacitance (Ciss) (Max) @ Vds:
1300pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 4.5V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
37mOhm @ 2.5A, 4.5V
Drain to Source Voltage (Vdss):
12V
Package / Case:
8-SMD, Flat Lead
Supplier Device Package:
8-EMH
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
1.2W
Current - Continuous Drain (Id) @ 25°C:
5A
Manufacturer:
ON Semiconductor
