SANYO Semiconductor (U.S.A) Corporation FW231A-TL-E

FW231A-TL-E SANYO Semiconductor (U.S.A) Corporation
FW231A-TL-E
SANYO Semiconductor (U.S.A) Corporation

Product Information

FET Feature:
Logic Level Gate
Rds On (Max) @ Id, Vgs:
23mOhm @ 8A, 4.5V
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 20V 8A 2.3W Surface Mount 8-SOP
Input Capacitance (Ciss) (Max) @ Vds:
1530pF @ 10V
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
21nC @ 4.5V
Drain to Source Voltage (Vdss):
20V
Package / Case:
8-SOIC (0.173", 4.40mm Width)
Supplier Device Package:
8-SOP
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
2.3W
Current - Continuous Drain (Id) @ 25°C:
8A
Manufacturer:
SANYO Semiconductor (U.S.A) Corporation
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This is manufactured by SANYO Semiconductor (U.S.A) Corporation. The manufacturer part number is FW231A-TL-E. The FET features of the product include logic level gate. It has a maximum Rds On and voltage of 23mohm @ 8a, 4.5v. It features mosfet array 2 n-channel (dual) 20v 8a 2.3w surface mount 8-sop. The product's input capacitance at maximum includes 1530pf @ 10v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 21nc @ 4.5v. The product has a 20v drain to source voltage. Moreover, the product comes in 8-soic (0.173", 4.40mm width). 8-sop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 2.3w. The continuous current drain at 25°C is 8a. The sanyo semiconductor (u.s.a) corporation's product offers user-desired applications.

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FW231A(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative SANYO Semiconductor (U.S.A) Corporation FW231A-TL-E and the best services all around the world ET11897657. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, SANYO Semiconductor (U.S.A) Corporation FW231A-TL-E, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as SANYO Semiconductor (U.S.A) Corporation, commonly silicon.

Our SANYO Semiconductor (U.S.A) Corporation FW231A-TL-E is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FW231A-TL-E. We stock a large inventory containing a wide range of variety ET11897657, differentiates by its unique features SANYO Semiconductor (U.S.A) Corporation. We also have discounts for potential customers and let it until most of them avail from SANYO Semiconductor (U.S.A) Corporation FW231A-TL-E. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11897657 from leading SANYO Semiconductor (U.S.A) Corporation, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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