Renesas Electronics America RJM0306JSP-01#J0

RJM0306JSP-01-J0 Renesas Electronics America RJM0306JSP-01#J0
Renesas Electronics America

Product Information

FET Feature:
Logic Level Gate, 4V Drive
Rds On (Max) @ Id, Vgs:
65mOhm @ 2A, 10V
Detailed Description:
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 3.5A 2.2W Surface Mount 8-SOP
Input Capacitance (Ciss) (Max) @ Vds:
290pF @ 10V
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
5nC @ 10V
Drain to Source Voltage (Vdss):
30V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:
8-SOP
Packaging:
Tube
FET Type:
2 N and 2 P-Channel (H-Bridge)
Customer Reference:
Power - Max:
2.2W
Current - Continuous Drain (Id) @ 25°C:
3.5A
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJM0306JSP-01#J0. The FET features of the product include logic level gate, 4v drive. It has a maximum Rds On and voltage of 65mohm @ 2a, 10v. It features mosfet array 2 n and 2 p-channel (h-bridge) 30v 3.5a 2.2w surface mount 8-sop. The product's input capacitance at maximum includes 290pf @ 10v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 5nc @ 10v. The product has a 30v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). 8-sop is the supplier device package value. In addition, tube is the available packaging type of the product. It carries FET type 2 n and 2 p-channel (h-bridge). The maximum power of the product is 2.2w. The continuous current drain at 25°C is 3.5a. The renesas electronics america's product offers user-desired applications.

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