EPC EPC2108ENGRT

EPC2108ENGRT EPC
EPC

Product Information

FET Feature:
GaNFET (Gallium Nitride)
Rds On (Max) @ Id, Vgs:
190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
Detailed Description:
Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 60V, 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)
Input Capacitance (Ciss) (Max) @ Vds:
22pF @ 30V, 7pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:
0.22nC @ 5V, 0.044nC @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 100µA, 2.5V @ 20µA
Series:
eGaN®
Standard Package:
1
Supplier Device Package:
9-BGA (1.35x1.35)
Packaging:
Cut Tape (CT)
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
3 N-Channel (Half Bridge + Synchronous Bootstrap)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
9-VFBGA
Drain to Source Voltage (Vdss):
60V, 100V
Current - Continuous Drain (Id) @ 25°C:
1.7A, 500mA
Other Names:
917-EPC2108ENGRCT
Manufacturer:
EPC
RoHs Compliant
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This is 2108ENGRT manufactured by EPC. The manufacturer part number is EPC2108ENGRT. The FET features of the product include ganfet (gallium nitride). It has a maximum Rds On and voltage of 190 mohm @ 2.5a, 5v, 3.3 ohm @ 2.5a, 5v. It features mosfet array 3 n-channel (half bridge + synchronous bootstrap) 60v, 100v 1.7a, 500ma surface mount 9-bga (1.35x1.35). The product's input capacitance at maximum includes 22pf @ 30v, 7pf @ 30v. The maximum gate charge and given voltages include 0.22nc @ 5v, 0.044nc @ 5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 100µa, 2.5v @ 20µa. The product egan®, is a highly preferred choice for users. It is available in the standard package of 1. 9-bga (1.35x1.35) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 3 n-channel (half bridge + synchronous bootstrap). Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in 9-vfbga. The product has a 60v, 100v drain to source voltage. The continuous current drain at 25°C is 1.7a, 500ma. Alternative Names include 917-epc2108engrct. The epc's product offers user-desired applications.

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative EPC EPC2108ENGRT and the best services all around the world ET11893598. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, EPC EPC2108ENGRT, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as EPC, commonly silicon.

Our EPC EPC2108ENGRT is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at EPC2108ENGRT. We stock a large inventory containing a wide range of variety ET11893598, differentiates by its unique features EPC. We also have discounts for potential customers and let it until most of them avail from EPC EPC2108ENGRT. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11893598 from leading EPC, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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