FET Feature:
GaNFET (Gallium Nitride)
Rds On (Max) @ Id, Vgs:
190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
Detailed Description:
Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 60V, 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)
Input Capacitance (Ciss) (Max) @ Vds:
22pF @ 30V, 7pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:
0.22nC @ 5V, 0.044nC @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 100µA, 2.5V @ 20µA
Series:
eGaN®
Standard Package:
1
Supplier Device Package:
9-BGA (1.35x1.35)
Packaging:
Cut Tape (CT)
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
3 N-Channel (Half Bridge + Synchronous Bootstrap)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
9-VFBGA
Drain to Source Voltage (Vdss):
60V, 100V
Current - Continuous Drain (Id) @ 25°C:
1.7A, 500mA
Other Names:
917-EPC2108ENGRCT
Manufacturer:
EPC