Toshiba Semiconductor and Storage SSM6N7002KFU,LF

SSM6N7002KFU-LF Toshiba Semiconductor and Storage SSM6N7002KFU,LF
Toshiba Semiconductor and Storage

Product Information

FET Feature:
Standard
Base Part Number:
TL1L4
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 300mA 285mW Surface Mount US6
Input Capacitance (Ciss) (Max) @ Vds:
40pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
0.6nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Drain to Source Voltage (Vdss):
60V
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 100mA, 10V
Supplier Device Package:
US6
Manufacturer Standard Lead Time:
16 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
285mW
Current - Continuous Drain (Id) @ 25°C:
300mA
Manufacturer:
Toshiba Semiconductor and Storage
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N7002KFU,LF. The FET features of the product include standard. Base Part Number: tl1l4. It features mosfet array 2 n-channel (dual) 60v 300ma 285mw surface mount us6. The product's input capacitance at maximum includes 40pf @ 10v. The maximum gate charge and given voltages include 0.6nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.1v @ 250µa. The product has a 60v drain to source voltage. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 1.5ohm @ 100ma, 10v. us6 is the supplier device package value. It has typical 16 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 285mw. The continuous current drain at 25°C is 300ma. The toshiba semiconductor and storage's product offers user-desired applications.

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SSM6N7002KFU(Datasheets)

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