ON Semiconductor NVMFD5877NLWFT3G

NVMFD5877NLWFT3G ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Rds On (Max) @ Id, Vgs:
39 mOhm @ 7.5A, 10V
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 6A 3.2W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Input Capacitance (Ciss) (Max) @ Vds:
540pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Standard Package:
5,000
Package / Case:
8-PowerTDFN
Supplier Device Package:
8-DFN (5x6) Dual Flag (SO8FL-Dual)
Manufacturer Standard Lead Time:
44 Weeks
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
2 N-Channel (Dual)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power - Max:
3.2W
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
6A
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is NVMFD5877NLWFT3G. The FET features of the product include logic level gate. It has a maximum Rds On and voltage of 39 mohm @ 7.5a, 10v. It features mosfet array 2 n-channel (dual) 60v 6a 3.2w surface mount 8-dfn (5x6) dual flag (so8fl-dual). The product's input capacitance at maximum includes 540pf @ 25v. The maximum gate charge and given voltages include 20nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. It is available in the standard package of 5,000. Moreover, the product comes in 8-powertdfn. 8-dfn (5x6) dual flag (so8fl-dual) is the supplier device package value. It has typical 44 weeks of manufacturer standard lead time. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). Its typical moisture sensitivity level is 1 (unlimited). The maximum power of the product is 3.2w. The product has a 60v drain to source voltage. The continuous current drain at 25°C is 6a. The on semiconductor's product offers user-desired applications.

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NVMFD5877NL(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor NVMFD5877NLWFT3G and the best services all around the world ET11863475. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor NVMFD5877NLWFT3G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor NVMFD5877NLWFT3G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NVMFD5877NLWFT3G. We stock a large inventory containing a wide range of variety ET11863475, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor NVMFD5877NLWFT3G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11863475 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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