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This is manufactured by Microsemi Corporation. The manufacturer part number is APTMC120AM55CT1AG. The FET features of the product include silicon carbide (sic). It has a maximum Rds On and voltage of 49mohm @ 40a, 20v. It features mosfet array 2 n-channel (half bridge) 1200v (1.2kv) 55a (tc) 250w chassis mount sp1. The product's input capacitance at maximum includes 1900pf @ 1000v. The maximum gate charge and given voltages include 98nc @ 20v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 2.2v @ 2ma (typ). The product has a 1200v (1.2kv) drain to source voltage. Moreover, the product comes in sp1. sp1 is the supplier device package value. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (half bridge). The maximum power of the product is 250w. The continuous current drain at 25°C is 55a (tc). The microsemi corporation's product offers user-desired applications.
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Our Microsemi Corporation APTMC120AM55CT1AG is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at APTMC120AM55CT1AG. We stock a large inventory containing a wide range of variety ET11853267, differentiates by its unique features Microsemi Corporation. We also have discounts for potential customers and let it until most of them avail from Microsemi Corporation APTMC120AM55CT1AG. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11853267 from leading Microsemi Corporation, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157
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