Diodes Incorporated DMN61D8LVTQ-7

DMN61D8LVTQ-7 Diodes Incorporated
Diodes Incorporated

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
DMN61
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 630mA 820mW Surface Mount TSOT-26
Input Capacitance (Ciss) (Max) @ Vds:
12.9pF @ 12V
Gate Charge (Qg) (Max) @ Vgs:
0.74nC @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 1mA
Drain to Source Voltage (Vdss):
60V
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
1.8Ohm @ 150mA, 5V
Supplier Device Package:
TSOT-26
Manufacturer Standard Lead Time:
20 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
820mW
Current - Continuous Drain (Id) @ 25°C:
630mA
Manufacturer:
Diodes Incorporated
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This is manufactured by Diodes Incorporated. The manufacturer part number is DMN61D8LVTQ-7. The FET features of the product include logic level gate. Base Part Number: dmn61. It features mosfet array 2 n-channel (dual) 60v 630ma 820mw surface mount tsot-26. The product's input capacitance at maximum includes 12.9pf @ 12v. The maximum gate charge and given voltages include 0.74nc @ 5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2v @ 1ma. The product has a 60v drain to source voltage. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 1.8ohm @ 150ma, 5v. tsot-26 is the supplier device package value. It has typical 20 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 820mw. The continuous current drain at 25°C is 630ma. The diodes incorporated's product offers user-desired applications.

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DMN61D8LVTQ(Datasheets)
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Diodes RoHS 3 Cert(Environmental Information)

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