Toshiba Semiconductor and Storage SSM6L09FUTE85LF
Product Information
FET Feature:
Logic Level Gate
Base Part Number:
SSM6L09
Detailed Description:
Mosfet Array N and P-Channel 30V 400mA, 200mA 300mW Surface Mount US6
Input Capacitance (Ciss) (Max) @ Vds:
20pF @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.8V @ 100µA
Drain to Source Voltage (Vdss):
30V
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
700mOhm @ 200MA, 10V
Supplier Device Package:
US6
Manufacturer Standard Lead Time:
12 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
300mW
Current - Continuous Drain (Id) @ 25°C:
400mA, 200mA
Manufacturer:
Toshiba Semiconductor and Storage
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6L09FUTE85LF. The FET features of the product include logic level gate. Base Part Number: ssm6l09. It features mosfet array n and p-channel 30v 400ma, 200ma 300mw surface mount us6. The product's input capacitance at maximum includes 20pf @ 5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.8v @ 100µa. The product has a 30v drain to source voltage. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 700mohm @ 200ma, 10v. us6 is the supplier device package value. It has typical 12 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 300mw. The continuous current drain at 25°C is 400ma, 200ma. The toshiba semiconductor and storage's product offers user-desired applications.
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